dim800ddm12 - a000 dual switch igbt module replaces ds5528 - 4 ds5528 - 5 june 2014 (ln 31688 ) caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 1 / 8 www.dynexsemi.com features ? 10s short circuit withstand ? high thermal cycling capability ? non punch through silicon ? isolated alsic base with aln substrates ? lead free construction applications ? high reliability inverters ? motor controllers ? traction drives the powerline ran ge of high power modules includes half bridge, chopper, dual, single and bi - directional switch configurations covering voltages from 1200v to 6500v and currents up to 2400a. the dim 800ddm12 - a000 is a dual switch 1 2 00v, n - channel enhancement mode, insulate d gate bipolar transistor (igbt) module. the igbt has a wide reverse bias safe operating area (rbsoa) plus 10s short circuit withstand. this device is optimised for traction drives and other applications requiring high thermal cycling capability. the mod ule incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety . ordering information order as: dim 800ddm12 - a000 note: when ordering , please use the complete part number key parameters v ces 12 00v v ce(sat) * (typ) 2.2 v i c (max) 80 0a i c(pk) (max) 16 00a * measured at the power busbars, not the auxiliary terminals fig. 1 circuit configuration outline type code: d ( see fig. 11 for further information) fig. 2 package 4 x m8 sc re w ing depth m ax 16 sc re w ing depth m ax 8 6 x m4 6 x o 7 7 ( c ) 1(e) 3( c ) 5 ( e ) 5 ( e ) 6 ( g ) 10 ( e ) 2( c ) 4(e) 12 ( c ) 11 ( g ) 130 0. 5 114 0.1 57 0.2 5 57 0.2 5 124 0. 25 140 0. 5 30 0.2 16 0.2 18 0.2 44 0.2 57 0.2 53 0.2 40 0.2 5 0. 2 29.2 0.5 5.25 0. 3 35 0.2 11.5 0.2 14 0.2 55.2 0. 3 11.85 0.2 38 +1.5 -0.0 28 0.5 20 0.1
dim 800ddm12 - a000 2 /8 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsem i.com absolute maximum ratings stresses above those listed under absolute maximum ratings may cause permanent damage to the device. in extreme conditions, as with all semiconductors, this may include pote ntially hazardous rupture of the package. appropriate safety precautions should always be followed. exposure to absolute maximum ratings may affect device reliability. t case = 25c unless stated otherwise symbol parameter test conditions max. units v ce s collector - emitter voltage v ge = 0v 12 00 v v ges gate - emitter voltage 20 v i c continuous collector current t case = 85 c 8 00 a i c(pk) peak collector current 1ms, t case = 115 c 16 00 a p max max. transistor power dissipation t case = 25 c , t j = 150 c 6940 w i 2 t diode i 2 t value v r = 0, t p = 10ms, t j = 125oc 100 ka 2 s v isol isolation voltage C per module commoned terminals to base plate. ac rms, 1 min, 50hz 2500 v q pd partial discharge C per module iec1287, v 1 = 13 00v, v 2 = 10 00v, 50hz rms 10 pc thermal and mechanical ratings internal insulation material: aln baseplate material: alsic creepage distance: 20 mm clearance: 10 mm cti (comparative tracking index): >600 symbol parameter test conditions min typ. max units r th(j - c) thermal resistance C th(j - c) thermal resistance C th(c - h) thermal resistance C j junction temperature transistor - - 150 c diode - - 125 c t stg storage temperature range - - 40 - 125 c screw torque mounting C C C
dim 800ddm12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 3 / 8 www.dynexsemi.com electrical characteristics t case = 25 c unless stated otherwise. symbol parameter test conditions min typ max units i ces collector cut - off current v ge = 0v, v ce = v ces 1 ma v ge = 0v, v ce = v ces , t case = 125 c 2 5 ma i ges gate leakage current v ge = 20v, v ce = 0v 4 a v ge(th) gate threshold voltage i c = 4 0ma, v ge = v ce 4.5 5.5 6.5 v v ce(sat) collector - e mitter saturation voltage v ge = 15v, i c = 8 00a 2. 2 2.8 v v ge = 15v, i c = 8 00a, t j = 125 c 2.6 3.2 v i f diode forward current dc 800 a i fm diode maximum forward current t p = 1ms 1600 a v f diode forward voltage i f = 8 00a 2.1 2.4 v i f = 8 00a, t j = 125 c 2.1 2.4 v c ies input capacitance v ce = 25v, v ge = 0v, f = 1mhz 90 nf q g gate charge 15v 9 c c res reverse transfer capacitance v ce = 25v, v ge = 0v, f = 1mhz nf l m module inductance C per switch 20 nh r int internal transistor resistance C per switch 270 ? sc data short circuit current, i sc t j = 125c, v cc = 900v t p 10s, v ge 15 v v ce (max) = v ces C l * x di/dt iec 60747 - 9 4500 a note: * l is the circuit inductance + l m
dim 800ddm12 - a000 4 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com electrical characteristics t case = 25c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - off delay time i c = 8 00 a v ge = 15v v ce = 6 00v r g(on) = 2.7 ? r g(off) = 2.7 ? l s ~ 10 0nh 1250 n s t f fall time 170 ns e off turn - off energy loss 1 30 mj t d(on) turn - on delay time 250 ns t r rise time 250 ns e on turn - on energy loss 80 mj q rr diode reverse recover y charge i f = 8 00a v ce = 6 00v di f /dt = 42 00a/s 80 c i rr diode reverse recovery current 380 a e rec diode reverse recovery energy 30 mj t case = 125c unless stated otherwise symbol parameter test conditions min typ. max units t d(off) turn - of f delay time i c = 800a v ge = 15v v ce = 600v r g(on) = 2.7 ? r g(off) = 2.7 ? l s ~ 100nh 1500 n s t f fall time 200 ns e off turn - off energy loss 1 60 mj t d(on) turn - on delay time 400 ns t r rise time 220 ns e on turn - on energy loss 120 mj q rr diode reverse recovery charge i f = 800a v ce = 6 00v di f /dt = 4000a/s 160 c i rr diode reverse recovery current 450 a e rec diode reverse recovery energy 60 mj
dim 800ddm12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 5 / 8 www.dynexsemi.com fig. 3 typical output characteristics fig. 4 typical output characteristics fig. 5 typical switching energy vs collector current fig. 6 typical switching energy vs gate resistance
dim 800ddm12 - a000 6 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com fig. 7 diode typical forward characteristics fig. 8 reverse bias safe operating area fig. 9 diode reverse bias safe operating area fig. 10 transient thermal im pedance
dim 800ddm12 - a000 caution: this device is sensitive to electrostatic discharge. users should follow esd handling procedures 7 / 8 www.dynexsemi.com package details for further package information, please visit our website or contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 900g module outline type code: d fig. 11 module outline drawing 4 x m8 screwing depth max 16 screwing depth max 8 6 x m4 130 0.5 124 0.25 30 0.2 16 0.2 18 0.2 29.2 0.5 5.25 0.3 14 0.2 5 0.2 57 0.25 57 0.25 114 0.1 40 0.2 44 0.2 53 0.2 57 0.2 11.85 0.2 55.2 0.3 38 +1.5 -0.0 35 0.2 11.5 0.2 7 (c) 1(e) 3(c) 5 (e) 5 (e) 6 (g) 10 (e) 2(c) 4(e) 12 (c) 11 (g) 140 0.5 6 x ? 7
dim 800ddm12 - a000 8 /8 caution: thi s device is sensitive to electrostatic discharge. users should follow esd handling procedures. www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversi ty of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the complete ness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have e ndeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subjec t to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or dama ge to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling us ing protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons an d property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production i s in progress. the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names u sed in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations customer service dynex semiconductor ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom dynex semiconduct or ltd doddington road, lincoln, lincolnshire, ln6 3lf, united kingdom fax: +44(0)1522 500550 fax: +44(0)1522 500020 tel: +44(0)1522 500500 tel: +44(0)1522 502753 / 502901 web: http://www.dynexsemi.com email: power_solutions@dynexsemi.com ? dyne x semiconductor ltd. 2002 . technical documentation C not for resale.
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